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| Parameters | Max | Units | |
| VR | Cathode-to-Anode Voltage | 600 | V |
| IF @ TC = 100°C | Continuous Forward Current | 4 | A |
| IFSM | Single Pulse Forward Current | 25 | A |
| IFRM | Maximum Repetitive Forward Current | 16 | A |
| PD @ TC = 25°C | Maximum Power Dissipation | 10 | W |
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PD @ TC = 100°C |
Maximum Power Dissipation | ||
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TJ, TSTG |
Operating Junction and Storage Temperatures | - 55 to 150 | °C |
International Rectifier’s HFA04TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 8 amps per Leg continuous current, the HFA04TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes.
The HEXFRED HFA04TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
