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539635-1资料 | |
539635-1 PDF Download |
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File Size : 116 KB
Manufacturer:TYCO / AMP Description:Notes: 8. Test conditions assume signal transition time of 5 ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH and 30 pF load capacitance. 9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 10. tHZOE, tHZCE, tHZBE and tHZWE transitions are measured when the outputs enter a high impedance state. 11. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE =VIL. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:539635-1 厂 家:TYCO / AMP 封 装: 批 号:07+ 数 量:1599 说 明:原装正品 |
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运 费:所有运费均有我司承担 所在地:深圳 新旧程度: |
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