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OPA657N/250资料 | |
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OPA657N/250 PDF Download |
File Size : 116 KB
Manufacturer:TI Description:<Mobile SDRAM> • Power Supply Voltage : 1.7~1.95V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • 1/CS Support. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:OPA657N/250 厂 家:TI 封 装: 批 号:07+ 数 量:55628 说 明:原装正品 |
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运 费:所有运费均有我司承担 所在地:深圳 新旧程度: |
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联系人:申小姐 |
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公司地址: 深圳市福田区中航路鼎城国际1017 |
1. 所有我司提供的货物,均为原厂原装正品! 2. 我们的报价是不含税价格。含税需要增加相应的税点。
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