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SN74LVCZ16245ADLR资料 | |
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SN74LVCZ16245ADLR PDF Download |
File Size : 116 KB
Manufacturer:TI Description:data, address and control registers. There are no registers in the data output path (flow-through architecture). Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as the IDT71V67703/7903 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will flow-through from the array after a clock-to-data access time delay from the rising clock edge of the same cycle. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses are defined by the internal burst counter and the LBO input pin. The IDT71V67703/7903 SRAMs utilize IDTs latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA) and a 165 fine pitch ball grid array (fBGA). |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:SN74LVCZ16245ADLR 厂 家:TI 封 装: 批 号:07+ 数 量:14570 说 明:原装正品 |
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运 费:所有运费均有我司承担 所在地:深圳 新旧程度: |
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联系人:申小姐 |
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公司地址: 深圳市福田区中航路鼎城国际1017 |
1. 所有我司提供的货物,均为原厂原装正品! 2. 我们的报价是不含税价格。含税需要增加相应的税点。
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