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SN75DP129RHHR资料 | |
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SN75DP129RHHR PDF Download |
File Size : 116 KB
Manufacturer:TI Description:The NMOS image sensor consists of a scanning circuit made up of MOS transistors, a photodiode array, and a switching transistor array that addresses each photodiode, all integrated onto a monolithic silicon chip. Figure 1 shows the circuit of a NMOS linear image sensor. The MOS scanning circuit operates at low power consump- tion and generates a scanning pulse train by using a start pulse and 2-phase clock pulses in order to turn on each ad- dress sequentially. Each address switch is comprised of an NMOS transistor using the photodiode as the source, the video line as the drain and the scanning pulse input section as the gate. The photodiode array operates in charge integration mode so that the output is proportional to the amount of light expo- sure (light intensity integration time). |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:SN75DP129RHHR 厂 家:TI 封 装: 批 号:07+ 数 量:22561 说 明:原装正品 |
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运 费:所有运费均有我司承担 所在地:深圳 新旧程度: |
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联系人:申小姐 |
电 话:0755-83330991,0755-83047629 |
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公司地址: 深圳市福田区中航路鼎城国际1017 |
1. 所有我司提供的货物,均为原厂原装正品! 2. 我们的报价是不含税价格。含税需要增加相应的税点。
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