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| TLV2622IDGKR资料 | |
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TLV2622IDGKR PDF Download |
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File Size : 116 KB
Manufacturer:TI Description:The L-Series was developed using a proven con- servative design methodology which includes se- lecting radiation tolerance and established reliabil- ity components and fully derating to the requirements of MIL-STD-975 and MIL-STD-1547. Heavy derat- ing of the power MOSFET gate and drain voltages minimize the possibility of SEGR and SEB. A mag- netic feedback circuit is utilized instead of opto-cou- plers to minimize temperature, radiation and aging sensitivity. PSPICE was used extensively to predict and optimize circuit performance for both beginning and end-of-life. Thorough design analyses include Radiation Susceptibility ( TREE ), Stress, Thermal, and Reliability ( MTBF ). |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：TLV2622IDGKR 厂 家：TI 封 装： 批 号：07+ 数 量：30683 说 明：原装正品 |
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运 费：所有运费均有我司承担 所在地：深圳 新旧程度： |
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| 联系人：申小姐 |
| 电 话：0755-83330991,0755-83047629 |
| 手 机：15811820920 |
| QQ：2355514181 |
| MSN：chipstech-int@hotmail.com |
| 传 真：0755-61658118 |
| EMail：sales@chipstech-int.com |
| 公司地址： 深圳市福田区中航路鼎城国际1017 |
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1. 所有我司提供的货物，均为原厂原装正品！ 2. 我们的报价是不含税价格。含税需要增加相应的税点。
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