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| TLV2625IPWR资料 | |
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TLV2625IPWR PDF Download |
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File Size : 116 KB
Manufacturer:TI Description:Honeywells enhanced SOI RICMOS™ IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate lengthLeff). Additional features include tungsten via plugs, Honeywells proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：TLV2625IPWR 厂 家：TI 封 装： 批 号：07+ 数 量：29664 说 明：原装正品 |
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运 费：所有运费均有我司承担 所在地：深圳 新旧程度： |
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| 联系人：申小姐 |
| 电 话：0755-83330991,0755-83047629 |
| 手 机：15811820920 |
| QQ：2355514181 |
| MSN：chipstech-int@hotmail.com |
| 传 真：0755-61658118 |
| EMail：sales@chipstech-int.com |
| 公司地址： 深圳市福田区中航路鼎城国际1017 |
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1. 所有我司提供的货物，均为原厂原装正品！ 2. 我们的报价是不含税价格。含税需要增加相应的税点。
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