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TSC2302IRGZ资料 | |
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TSC2302IRGZ PDF Download |
File Size : 116 KB
Manufacturer:TI Description:SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The ACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A11 select the row). The READ or WRITE commands in conjunction with address bits reg- istered are used to select the starting column location for the burst access. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:TSC2302IRGZ 厂 家:TI 封 装: 批 号:07+ 数 量:17202 说 明:原装正品 |
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运 费:所有运费均有我司承担 所在地:深圳 新旧程度: |
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公司地址: 深圳市福田区中航路鼎城国际1017 |
1. 所有我司提供的货物,均为原厂原装正品! 2. 我们的报价是不含税价格。含税需要增加相应的税点。
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